Specific Process Knowledge/Lithography/Descum/PlasmaAsher1

Descum results plasma asher 1. September 2019

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Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Recipe 1:
Note: Plasma asher was cold before use

O2 flow: 70 ml/min
N2 flow: 70 ml/min
Power: 150 W

Ashing time (min)	1	2	5	7	10	10
Etched Thickness (nm)	14.2	16.3	47.6	123.2	854.3	862.1

Recipe 2:
Note: Plasma asher was cold before use

O2 flow: 500 ml/min
N2 flow: 0 ml/min
Power: 500 W

Ashing time (min)	1	2	5	7	10	10
Etched Thickness (nm)	-	8.1	32.9	271.1	495.6	446.2

Descum tests on UV resists

Conny Hjort & Jesper Hanberg, September 2021

Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.

Recipe settings:
Note: plasma Asher was cold before use.

O2 flow: 70 ml/min
N2 flow: 70 ml/min

Power: 150 W

Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.

1,5 um AZ5214E resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	6,28	102,99	76,92	N/A	N/A

1,5 um AZ5214E resist placed horizontally in the carrier:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	63,03	143,32	304,29	372,59	N/A

1,5 um AZ701MiR resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	268,88	199,54	219,03	200,86	292,15

1,5 um AZ 2020nLOF resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	1,68	76,51	169,72	481,96	272,59