Specific Process Knowledge/Etch/Titanium Oxide

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Etch of Titanium oxide has been test in the ICP metal etcher.

• Titanium Oxide etch using ICP metal
• Titanium Oxide etch using BHF

Comparison of Titanium Oxide (ALD) etch Methods

	BHF	ICP Metal Etcher
Generel description	Wet etch of TiO2 (ALD)	Dry etch of TiO2
Etch rate range	2,5 nm/min	It has not been explored current recipe ~8 nm/min
Etch profile	Isotropic	Anisotropic
Substrate size	Any size (in beaker)	Samples < 150 mm wafers on carrier one 150 mm wafer at a time
Allowed materials	In beaker: Any material	silicon, silicon oxides and nitrides Al, Cr, Ti (incl. oxides and nitrides) Ta, W, Nb (incl. oxides and nitrides)