Specific Process Knowledge/Etch/Titanium Nitride/ICP metal
Etching of Titanium nitride with resist as masking material - on 6" carrier wafer
This recipe was adapted from Evgeniy Shkondin recipe from 2018. This recipe is still under investigation.
| Parameter | A Etch with carrier |
|---|---|
| Coil Power [W] | 500 |
| Platen Power [W] | 10 |
| Platen temperature [oC] | 0 |
| Cl2 flow [sccm] | 5 |
| Ar flow [sccm] | 5 |
| Pressure [mTorr] | 10 |
| Results | Test on wafer with 20% load, by prakus @Nanolab | Test by eves @nanolab |
|---|---|---|
| Etch rate of TiN | ## nm/min (2025) | |
| Selectivity to resist [TiN : AZ resist] | #:# | |
| Wafer uniformity (100mm) | ? | |
| Profile [o] | ? | |
| Wafer uniformity map (click on the image to view a larger image) | coming soon | |
| SEM profile images | coming soon |