Specific Process Knowledge/Etch/III-V ICP/SiO2
Feedback to this page: click here
The content on this page, including all images and pictures, was created by Berit Herstrøm @ DTU Nanolab (BGHE), unless otherwise stated.
| Parameter | Parameter settings |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | SiO2 Etch Slow |
|---|---|
| Etch rate of PECVD BPSG | 39.4nm/min (22-01-2016) Test by Artem Shikin @ Fotonik |
| Etch rate in thermal oxide |
48nm/min (bghe 17-01-2017)- whole 4" wafer with capton tape |
| Selectivity to resist [:1] | Not known |
| Etch rate in silicon |
bghe@Nanolab 20190117
|
| Wafer uniformity (100mm) |
+-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests) |
| Profile [o] | Not known |
| Wafer uniformity map (click on the image to view a larger image) | Not known |
| SEM profile images | NONE |
| Comment | Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s |