Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs/InP etch with Cl2-H2-Ar

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

InP etching with Cl2 and H2 including some Ar (Done by bghe@Nanolab)

Parameter	SiO2 mask before etch	Carrier	Coil power	Platen power	Pressure	Flow rate Cl2	Flow rate H2	Flow rate Ar	T	Process time	Results image1	Profile angles	Etch rate in InP	Etch rate in SiO2	Selectivity (InP:SiO2)
20190222 s009209 s12	500nm	silicon	800W	150 W / 134V	0.5 mTorr	6.6 sccm	5.4 sccm	0 sccm	180	6:00 min		90	925nm/min	54 nm/min	~17
20190226 s009224 s13	500nm	silicon	800W	150 W /134V	1.0 mTorr	6.6 sccm	5.4 sccm	12 sccm	180	4:00 min		~95 degrees	750 nm/min	58 nm/min	~13
20190222 s009226 s14	500nm	silicon	1200W	150 W /87V	1.0 mTorr	6.6 sccm	5.4 sccm	12 sccm	180	4:00 min		~95 degrees	790 nm/min	51 nm/min	~15.5
20190403 s s15	500nm	silicon	800W	150 W / 140V	0.5 mTorr	6.6 sccm	5.4 sccm	0 sccm	180	6:00 min		91.2-92.1 larger on smaller lines	893-972 nm/min	52 nm/min	17-19
20190403 s s16	500nm	silicon	600W	150 W / 180V	0.5 mTorr	6.6 sccm	5.4 sccm	0 sccm	180	6:00 min		91.2-92.1 larger on smaller lines	900-940 nm/min	53 nm/min	17-18
20190403 s s17	500nm	silicon	1200W	150 W/50W 0V	0.5 mTorr	6.6 sccm	5.4 sccm	0 sccm	180	6:00 min		Undercut	330 nm/min	6-7 nm/min	50
20190501 s18	500nm	silicon	1200W	150 W 110V	0.6 mTorr	6.6 sccm	5.4 sccm	0 sccm	180	6:00 min		91.5-92.0	927 nm/min	55 nm/min	17
20190501 s19	500nm	silicon	1200W	220 W 150V	0.6 mTorr	6.6 sccm	5.4 sccm	0 sccm	180	6:00 min	Process Failed		nm/min	nm/min
20190501 s20	500nm	silicon	1200W	220 W /150V	0.6 mTorr	6.6 sccm	5.4 sccm	0 sccm	180	6:10 min		93-94	1077 nm/min	70 nm/min	15
	500nm	silicon	800W	150 W /	1.0 mTorr	6.6 sccm	9.4 sccm	8.0 sccm	180	7:30 min		degrees	nm/min	nm/min