Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan332

The Sinano3.32 recipe

Recipe Sinano3.32

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 30 W PP
	Temperature	50 degs
	Hardware	100 mm Spacers
	Time	60, 120 and 180 secs
Conditions	Run ID	465, 466 and 467
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	211 nm zep

• The results of the Sinano3.32 recipe
• 
  The 30 nm trenches etched 60 seconds
• 
  The 60 nm trenches etched 60 seconds
• 
  The 90 nm trenches etched 60 seconds
• 
  The 120 nm trenches etched 60 seconds
• 
  The 150 nm trenches etched 60 seconds
• 
  The 30 nm trenches etched 120 seconds
• 
  The 60 nm trenches etched 120 seconds
• 
  The 90 nm trenches etched 120 seconds
• 
  The 120 nm trenches etched 120 seconds
• 
  The 150 nm trenches etched 120 seconds
• 
  The 30 nm trenches etched 180 seconds
• 
  The 60 nm trenches etched 180 seconds
• 
  The 90 nm trenches etched 180 seconds
• 
  The 120 nm trenches etched 180 seconds
• 
  The 150 nm trenches etched 180 seconds

After 60 seconds

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min	44	57	59	64	63	57	8
Sidewall angle	degs	73	74	76	78	73	75	2
CD loss	nm/edge	-4	-15	-14	-12	-32	-15	10
CD loss foot	nm/edge	1	-1	0	-1	-4	-1	2
Bowing		4	6	1	6	1	4	2
Bottom curvature		-14	-9	-5	-1	-1	-6	5
Zep etch rate	nm/min						33

After 120 seconds

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min	48	60	67	69	71	63	9
Sidewall angle	degs	78	78	76	75	75	76	1
CD loss	nm/edge	-1	-12	-15	-13	-30	-14	10
CD loss foot	nm/edge	5	1	-1	-1	-3	0	3
Bowing		7	8	16	20	19	14	6
Bottom curvature		-22	-12	6	8	5	-3	13
Zep etch rate	nm/min						22

After 180 seconds

Nominal trench line width	'	30	60	90	150	Average	Std. dev.
Etch rate	nm/min	43	59	65	70	59	12
Sidewall angle	degs	82	80	79	77	79	2
CD loss	nm/edge	-5	-16	-18	-30	-17	10
CD loss foot	nm/edge	1	-3	-4	-3	-2	2
Bowing		9	19	24	31	21	9
Bottom curvature		-30	-16	-8	13	-10	18
Zep etch rate	nm/min					19