Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan331-2

The Sinano3.31 recipe

Recipe Sinano3.31

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 75 W PP
	Temperature	50 degs
	Hardware	30 mm Spacers
	Time	60, 120 and 180 secs
Conditions	Run ID	461, 462 and 463
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	190 nm zep

• The results of the Sinano3.31 recipe
• 
  The 30 nm trenches etched 60 seconds
• 
  The 60 nm trenches etched 60 seconds
• 
  The 90 nm trenches etched 60 seconds
• 
  The 120 nm trenches etched 60 seconds
• 
  The 150 nm trenches etched 60 seconds
• 
  The 30 nm trenches etched 120 seconds
• 
  The 60 nm trenches etched 120 seconds
• 
  The 90 nm trenches etched 120 seconds
• 
  The 120 nm trenches etched 120 seconds
• 
  The 150 nm trenches etched 120 seconds
• 
  The 30 nm trenches etched 180 seconds
• 
  The 60 nm trenches etched 180 seconds
• 
  The 90 nm trenches etched 180 seconds
• 
  The 120 nm trenches etched 180 seconds
• 
  The 150 nm trenches etched 180 seconds

After 60 seconds

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min	73	98	108	111	113	101	16
Sidewall angle	degs	78	81	79	78	79	79	1
CD loss	nm/edge	-7	-21	-20	-15	-34	-19	10
CD loss foot	nm/edge	-1	-7	-6	-4	-7	-5	3
Bowing		10	7	12	8	9	9	2
Bottom curvature		-34	-4	2	6	5	-5	17
Zep etch rate	nm/min						47

After 120 seconds

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min	76	98	107	116	117	103	17
Sidewall angle	degs	84	82	81	81	80	82	2
CD loss	nm/edge	-4	-16	-15	-13	-24	-15	7
CD loss foot	nm/edge	1	-3	-1	-1	3	0	2
Bowing		12	21	18	27	22	20	5
Bottom curvature		-17	-17	-6	10	12	-3	14
Zep etch rate	nm/min						45

After 180 seconds

Nominal trench line width	'	30	60	90	150	Average	Std. dev.
Etch rate	nm/min	73	99	107	114	98	18
Sidewall angle	degs	85	84	83	81	83	2
CD loss	nm/edge	-6	-15	-12	-25	-14	8
CD loss foot	nm/edge	0	-1	2	2	1	2
Bowing		18	26	26	29	25	5
Bottom curvature		-27	-27	-7	9	-13	17
Zep etch rate	nm/min					36