Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan331

The Sinano3.31 recipe

Recipe Sinano3.31

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 75 W PP
	Temperature	50 degs
	Hardware	100 mm Spacers
	Time	60, 120 and 180 secs
Conditions	Run ID	452, 453 and 454
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	190 nm zep

• The results of the Sinano3.31 recipe
• 
  The 30 nm trenches etched 60 seconds
• 
  The 60 nm trenches etched 60 seconds
• 
  The 90 nm trenches etched 60 seconds
• 
  The 120 nm trenches etched 60 seconds
• 
  The 150 nm trenches etched 60 seconds
• 
  The 30 nm trenches etched 120 seconds
• 
  The 60 nm trenches etched 120 seconds
• 
  The 90 nm trenches etched 120 seconds
• 
  The 120 nm trenches etched 120 seconds
• 
  The 150 nm trenches etched 120 seconds
• 
  The 30 nm trenches etched 180 seconds
• 
  The 60 nm trenches etched 180 seconds
• 
  The 90 nm trenches etched 180 seconds
• 
  The 120 nm trenches etched 180 seconds
• 
  The 150 nm trenches etched 180 seconds

After 60 seconds

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		81	107	111	116	122	107	16
Sidewall angle	degs		83	83	81	82	77	81	3
CD loss	nm/edge		-4	-13	-12	-12	-29	-14	9
CD loss foot	nm/edge		1	0	1	-1	-2	0	2
Bowing			6	5	10	8	18	9	5
Bottom curvature			-6	-5	-2	-3	3	-3	3
Zep etch rate	nm/min							81

After 120 seconds

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min	77	101	112	119	119	106	18
Sidewall angle	degs	85	84	84	82	82	83	1
CD loss	nm/edge	-4	-17	-14	-10	-23	-13	7
CD loss foot	nm/edge	2	-4	0	2	4	1	3
Bowing		9	11	14	15	9	12	3
Bottom curvature		-28	-4	-2	2	3	-6	13
Zep etch rate	nm/min						56

after 180 seconds

Nominal trench line width	'	30	60	90	150	Average	Std. dev.
Etch rate	nm/min	49	97	105	111	91	28
Sidewall angle	degs	76	83	82	80	80	3
CD loss	nm/edge	18	7	14	3	10	7
CD loss foot	nm/edge	23	20	28	30	25	5
Bowing		-2	10	-4	-5	0	7
Bottom curvature		-28	-9	-2	1	-9	13
Zep etch rate	nm/min					53