Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium
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Aluminium etch
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
The aluminium etch has two steps:
- Breakthrough
- The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.
- Main
- The main step etches bulk aluminium.
Parameter | Process step | |
---|---|---|
Breakthrough | Main | |
Time (secs) | 20 | 40 (variable) |
HBr (sccm) | - | 15 |
Cl2 (sccm) | 20 | 25 |
Pressure (mTorr) | 2, Strike 3 sec@5 mTorr | 1 |
Coil power (W) | 600 | 500 |
Platen power (W) | 125 | 100 |
Temperature (oC) | 20 | 20 |
Spacers (mm) | 30 | 30 |
Results | ||
Etch rate | ~350 nm/min (depending on features size and etch load) |
Parameter | Process step | |
---|---|---|
Breakthrough | Main | |
Time (secs) | 20 | 40 (variable) |
HBr (sccm) | - | 15 |
Cl2 (sccm) | 20 | 25 |
Pressure (mTorr) | 2, Strike 3 secs @ 6 mTorr | 1 |
Coil power (W) | 600 | 500 |
Platen power (W) | 125 | 100 |
Temperature (oC) | 20 | 20 |
Spacers (mm) | 100 | 100 |
Results | ||
Etch rate | ~282 nm/min (depending on features size and etch load) |