Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Results from the acceptance test in February 2011

Acceptance test for Ti etch :

. Acceptance Criteria

Acceptance Results

Substrate information
  • 50 mm SSP Si wafer
  • 525 µm thick
  • Supplied by Nanolab
 .
Material to be etched
  • E-beam deposited Ti
 .
Mask information
  • E-beam resist mask:
  1. 400nm of spin coated ZEP520A e-beam resist
  2. Patterned by E-beam lithography
 .
Features to be etched
  • 300 nm - 3µm dots and lines + a square of 200µmx200µm
 .
Etch depth
  • 300nm
  • ~270 nm
Etch rate
  • >80 nm/min
  • 22 nm/min +- 0.3nm/min (one standard deviation)
Etch rate uniformity
  • <+-2%
  • +-(0.2% +-0.2%)
Reproducibility
  • <+-2%
  • +-(0.8% +-0.5%)
Selectivity (Ti etch rate/ZEP etch rate)
  • At least 1:1
  • 0.7:1
Etch profile
  • 70-90dg.
  • ~65dg @270nm
  • ~77dg @123nm

Process parameters for the acceptance test

Parameter Ti etch acceptance
Neutralizer current [mA] 550
RF Power [W] 1200
Beam current [mA] 500
Beam voltage [V] 600
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 6.0
Ar flow to beam [sccm] 6.0
Rotation speed [rpm] 20
Stage angle [degrees] 20



Some SEM profile images of the etched Ti

Ti s10-4: 270nm deep - 500nm line. all zep has gone. Profile: ~65 dg.
Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.
Ti S7 5: 123nm deep - 300nm line. Still zep left. Profile: ~77 dg
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