Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/With Hard Mask

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Some testing of SiO2 etch with hard mask

	Cr mask (Recipe mane: SiO2_met)	Al mask (Recipe mane: SiO2_met)	ALD Al2O3 (Recipe mane: SiO2_met)
Generel description	SiO2_met: This recipe has been developed by SPTS for metal masks @60 degrees. These tests were done by Martin Lind Ommen @nanotech Fall 2016, see the work here: [1]
Substrate	Silicon wafer 100 mm with silicon oxide
Mask material/Thickness	50 nm Cr	50nm Al	103 nm ALD Al2O3
Coil Power	1100W
Platen Power	180W
Platen temperature	0oC
He flow	0 sccm
C4F8 flow	40 sccm
O2 flow	5 sccm
H2 flow	0 sccm
Pressure	6 mTorr
Etch rate in SiO2	407 nm/min (Fall 2016 by Martin Lind Ommen @nanotech)
Selectivity to mask	~1:135 (Fall 2016 by Martin Lind Ommen @nanotech)	~1:135 (Fall 2016 by Martin Lind Ommen @nanotech)	~1:214 (Fall 2016 by Martin Lind Ommen @nanotech)
Linewidth reduction	Not measured	Not measured	Not measured
Substrate size tried	100 mm wafer
Images	None	None	None