Specific Process Knowledge/Etch/DRIE/Pegasus/DREM/DREM 3kW 100% a

From LabAdviser


Date Substrate Information Process Information Results
Wafer info Material/ Exposed area Condi- tioning Recipe Wafer ID Comments SEM images Picoscope Numbers
29/11-2019 Medusa One Si / 10% stab-19 chamber clean 20 nanolab/ jmli /DREM 3.0 kW 100% a S018652 Process log entry

SEM image: a000 a001 a002 a003 a004 a005 a006 a007 a008 a009
Trench width (um) 400.14 400.65 249.77 161.15 81.37 41.79 20.28 9.84 4.27 2.71
Etched depth (um) 140.42 140.43 141.5 141.57 135.57 124.71 108.95 91.98 70.41 60.74
Etch rate (um/min) 14.04 14.04 14.15 14.16 13.56 12.47 10.89 9.2 7.04 6.07
Etch rate (nm/cyc) 1.17 1.17 1.18 1.18 1.13 1.04 0.91 0.77 0.59 0.51
Sidewall bowing (%) -0.36 -0.8 -0.45 -0.31 -0.14 -0.04 0.28 0.64 0.44 0.76
Sidewall angle (degs) 93.28 93.18 93.1 92.33 91.82 91.58 91.53 91.37 91.12 90.66
Bottom bowing (%) 3.39 3.99 5.43 8.68 13.13 16.86 18.26 13.09 16.07 18.41
Aspect ratio 0.34 0.34 0.55 0.85 1.58 2.76 4.7 7.64 12.46 17.77