Specific Process Knowledge/Characterization/X-Ray Diffractometer

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The X-Ray Diffractometer has been decomissioned. Please find other XRD setups at DTU Nanolab here.

Philips DCD IIH X-ray Diffractometer

X-ray diffractometer

The Philips DCD IIH x-ray diffractometer used to characterize the layers on epitaxial semiconductor structures - usually III-V compound semiconductors.

X-ray diffraction is a non-destructive technique to measure the lattice mismatch of epitaxial grown layers. The resulting measurements are also know as rocking-curves. In this way it is possible to get the relative content of e.g. In in Ga_xIn_1-xAs grown on InP. Ga_0.47In_0.53As is lattice-matched to InP. Compunds containing three different materials are also called ternaries. For more complex compounds containing 4 elements, known as quaternaries, e.g. Ga_xIn_1-xAs_yP_1-y, it is possible to obtain both x and y by combining x-ray diffraction measurements and PL-measurements (see PL Mapper).

Equipment performance and process related parameters

Performance	Excitation	x-ray tube Cu K-alpha (K$\alpha$) 1.5418 Å
	Detection	counter
	Sample size	from 5x5mm up to 4" approximately
	Resolution	?? arc-sec
Materials	Allowed substrate materials	III-V Silicon