File:WF 2E05 mar23 2011-120c.jpg
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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers
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current | 14:22, 7 April 2011 | 1,024 × 768 (121 KB) | Jml (talk | contribs) | Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers |
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