File:WF 2C2 feb2011-030.jpg

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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.

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current12:42, 18 March 2011Thumbnail for version as of 12:42, 18 March 20111,024 × 768 (136 KB)Jml (talk | contribs)Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.

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