File:WF 2B5 feb06 2011-030.jpg

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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.4 recipe, Run ID 431, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/90 coil/platen, 20 degs.

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current14:49, 15 March 2011Thumbnail for version as of 14:49, 15 March 20111,024 × 768 (109 KB)Jml (talk | contribs)Etching of nanostructures in Si using the ICP metal etcher: Sinano3.4 recipe, Run ID 431, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/90 coil/platen, 20 degs.

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