File:WF 2A4 feb06 2011-150.jpg
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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.0 recipe, Run ID 417 and 418 and 419, time 150 secs, BCl3 5, HBr 15, 2mtorr, 900/50 coil/platen, 20 degs.
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 14:42, 15 March 2011 | | 1,024 × 768 (138 KB) | Jml (talk | contribs) | Etching of nanostructures in Si using the ICP metal etcher: Sinano3.0 recipe, Run ID 417 and 418 and 419, time 150 secs, BCl3 5, HBr 15, 2mtorr, 900/50 coil/platen, 20 degs. |
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