File:WF 2A4 feb06 2011-090.jpg

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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.0 recipe, Run ID 417 and 418 and 419, time 150 secs, BCl3 5, HBr 15, 2mtorr, 900/50 coil/platen, 20 degs.

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current15:41, 15 March 2011Thumbnail for version as of 15:41, 15 March 20111,024 × 768 (143 KB)Jml (talk | contribs)Etching of nanostructures in Si using the ICP metal etcher: Sinano3.0 recipe, Run ID 417 and 418 and 419, time 150 secs, BCl3 5, HBr 15, 2mtorr, 900/50 coil/platen, 20 degs.

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