Specific Process Knowledge/Etch/Etching of Polymer
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Etching of Polymer
Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controlled etch of the polymer is needed a plasma system is used instead. Plasma ashers are designed for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.
Comparison of methods for polymer etching
ASE | Plasma asher 1 | Plasma asher 2 | RIE2 | Wet Polymer Etch | |
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General description | The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. | RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager. | Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. |
Etch direction |
Process dependent: |
Isotropic |
Isotropic |
Process dependent: |
Isotropic |
Possible etch reactants |
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Substrate size |
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Allowed materials |
Silicon wafers with layers of
Quartz/fused silica wafers Polymer wafers? |
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Silicon wafers with layers of
Quartz/fused silica wafers Polymer wafers (only with special permission) |
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