Specific Process Knowledge/Etch/Etching of Polymer
THIS PAGE IS UNDER CONSTRUCTION
Feedback to this page: click here
Etching of Polymer
Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controled etch of the polymer is needed a plasma system is used instead. Plasma ashers are design for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.
Comparison method 1 and method 2 for the process
ASE | Plasma asher 1 | Plasma asher 2 | RIE2 | Wet Polymer Etch
| |
---|---|---|---|---|---|
Generel description | The ASE was originally for deep Si etch but has now been turned into a polymer etcher. It should be used for pattering polymers | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers. This plasma asher is for Si wafers without metals. | RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager. | Wet polymer etch is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. |
Parameter 1 |
|
|
|
|
|
Parameter 2 |
|
|
|
|
|
Substrate size |
|
|
|
|
|
Allowed materials |
|
|
|
|
|