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Comparing Lithography methods at Danchip

There are a broad varity of lithography methods at Danchip. The methods are compared here to make it easier for you to compare and choose the one that suits your needs.

Process description using method 1

Process description using method 2

Comparison methode 1 and methode 2 for the process

	Photolithography	DUV Lithography	E-beam Lithography	Imprint Lithography	Two photon polymerization Lithography
Generel description	Generel description - methode 1	Generel description - methode 2	3	4	5
Pattern size range	~1µm and up	~200nm and up	~10nm and up	~20nm and up	3D ?nm
Resist type	UV sensitive: AZ SU8	DUV sensitive fff	E-beam sensitive ZEP502A (positive) HSQ (negative) SU8	Imprint polymers: ??	?? sensitive: ??
Resist thickness range	~0.5µm to 20µm?	~50nm to 2µm?	~30nm to 0.5 µm	~20nm to 10µm?	?nm - ?µm
Typical exposure time	2s-30s pr. wafer	?-? pr. ?	Depends on dose (in units of muC/cm2), estimate exposure time on sheet 2 of e-beam logbook	? pr. wafer	? pr. µm2
Substrate size	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	We have cassettes that fit to 4 small samples (20mm, 12mm, 8mm, 4mm) 6 wafers of 50 mm in size 2 wafers of 100 mm in size 1 wafer of 150 mm in size Only one cassette can be loaded at time	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers
Allowed materials	Allowed material 1 Allowed material 2	Allowed material 1 Allowed material 2 Allowed material 3	Si, SiO2, III-V materials	Allowed material 1 Allowed material 2 Allowed material 3	Allowed material 1 Allowed material 2 Allowed material 3