Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium

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Titanium etch

Ti etch
Parameter Process 1 Process 2
Cl2 (sccm) 30 30
HBr (sccm) - -
Pressure (mTorr) 3, Strike 3 secs @ 15 mTorr??? 3
Coil power (W) 800 900
Platen power (W) 100 50
Temperature (oC) 20 20
Spacers (mm) 30 30
Etch rate (nm/min) 152 64
AZ resist selectivity 0.67 0.83
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