Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide/IBSD of TiO2

From LabAdviser

Acceptance test for TiO2 deposition:

. Acceptance Criteria

Acceptance Results recipe 1

Acceptance Results recipe 2
Substrate information
  • 50 mm SSP Si wafer
  • 525 µm thick
  • Supplied by Danchip
  • 100 mm SSP Si wafer
  • 525+-25 µm thick
  • 100 mm SSP Si wafer
  • 525+-25 µm thick
Material to be deposited
  • TiO2

The purpose of the TiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses):1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material.

  • TiO2
  • TiO2
Deposition thickness
  • 147nm
  • ~184 nm
  • 121 nm
Deposition rate
  • 2.8 nm/min
  • 3.54nm/min +- 0.03nm/min

One stdev - wafer to wafer

  • 3.03nm/min

Only done once

Thickness uniformity
  • <+-1%
  • <+-1.00%
  • <+-0.90%
Reproducibility
  • <+-1.5%
  • +-0.9% on 5 wafers in a row
  • not tested
Stress
  • <500MPa
  • ~300MPa
  • Not measured expect ~300MPa
Refractive index .
  • 2.451+-0.004 (stddev wafer to wafer)
  • 2.437+-0.005 (stddev on wafer)


Recipe 1 Recipe 2
Platen angle 50 degrees 30 degrees
Platen rotation speed 20rpm 20rpm
Ar(N) flow 4 sccm 4 sccm
Ar(dep. source) flow 9 sccm 9 sccm
O2(dep. source) flow 2 sccm 2 sccm
O2(etch source) flow 8 sccm 8 sccm
I(N) 459mA 450mA
Power 875W 875W
I(B) 390mA 390mA
V(B) 1300V 1300V
Vacc(B) 400V 400V
Deposition time 52min 40min



Other results

Roughness of the surface

Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= ~1nm