Results for Si etching in the IBE

Made by Kristian Hagsted Rasmussen @ Nanotech <br\>

Best recipe with respect to the etch profile and low redeposition:

Parameter	Best Si etching recipe so fare
Neutalizer current [mA]	450
RF Power [W]	1200
Beam current [mA]	400
Beam voltage [V]	600
Beam accelerator voltage	400
Ar flow to neutralizer [sccm]	6.0
Ar flow to beam [sccm]	6.0
Rotation speed [rpm]	20
Stage angle [degrees]	5
Results	vvv
Etch rate [nm/min]	18