Specific Process Knowledge/Etch/Etching of Silicon Nitride
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Revision as of 17:20, 19 November 2007 by BGE (talk | contribs) (→Comparison of wet Silicon Nitride etch and RIE etch for etching of Silicon Nitride)
Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials.
Comparison of wet Silicon Nitride etch and RIE etch for etching of Silicon Nitride
Wet Silicon Nitride etch | Buffered HF (BHF) | RIE | |
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General description |
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Possible masking materials: |
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Etch rate |
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Batch size |
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Size of substrate |
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Allowed materials |
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