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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch

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Revision as of 11:54, 31 July 2012 by BGE (talk | contribs) (New page: =results for Si etching in the IBE= Best recipe so fare: {| border="2" cellspacing="2" cellpadding="3" !Parameter !Best Si etching recipe so fare |- |Neutalizer current [mA] |450 |- |RF ...)
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results for Si etching in the IBE

Best recipe so fare:

Parameter Best Si etching recipe so fare
Neutalizer current [mA] 450
RF Power [W] 1200
Beam current [mA] 400
Beam voltage [V] 400
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 6.0
Ar flow to beam [sccm] 6.0
Rotation speed [rpm] 20
Stage angle [degrees] 10
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