Some general process trends

This page is supposed to gather some general process trends and good advise for designing IBE recipes.

Etch rate

Etch rate	Parameters
increases with	Beam current
increases with	Beam voltage
increases with	Beam current * Beam voltage
not significantly effected by	Stage angle
not significantly effected by	Accelerator voltage

Etch profile (goal 90dg)	Parameters
improves with	Low stage angle (optimum around 5-10 dg)
is effected by	Beam current (low I(B)(400mA) better than high I(B)(600mA))
is effected by	Accelerator voltage * Stage angle
not significantly effected by	Beam voltage