Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow

Etch slow

This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Parameter	Si etch test1	Si etch test2
Neutalizer current [mA]	450	250
RF Power [W]	1200	1000
Beam current [mA]	400	200
Beam voltage [V]	400	200
Beam accelerator voltage	400	200
Ar flow to neutralizer [sccm]	6.0	6.0
Ar flow to beam [sccm]	6.0	6.0
Rotation speed [rpm]	20	20
Stage angle [degrees]	10	10
Platen temp. [dg. Celcius]	15	15
He cooling pressure [mTorr]	37.5	37.5
Etch material	Si	Si
Results	vvv	vvv
Etch time [min]	40	40
Etch rate in Si [nm/min]	19.7	3.58
Total time in Acetone + ultrasound [min]	17	10
Was the resist completely removed after acetone + ultrasound?	no	yes