Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch

Recipe	nano1.0	nano1.1	nano1.2	nano1.3	nano1.21	nano1.4	nano1.41	nano1.42	nano1.43
C4F8 (sccm)	52	52	52	52	75	75	75	75	75
SF6 (sccm)	38	38	38	38	38	38	38	38	38
O2 (sccm)	0	0	0	0	0	0	0	0	0
Coil power (W)	800 (F)	600 (F)	800 (F)	600 (F)	800 (F)	800 (F)	800 (F)	800 (F)	800 (F)
Platen power (W)	50	50	50	40	50	50	75	40	30
Pressure (mtorr)	4	4	4	4	4	4	4	4	4
Temperature (degs C)	10	10	-10	-10	-10	-20	-20	-20	-20
Process time (s)	120	120	120	120	120	120	120	120	120
Etch rates (nm/min)
Averages	295	228	299	235	183	183	166	160	148
Std. Dev	36	29	37	20	9	9	9	8	6
Zep etch rate (nm/min)
		172	95	94	69	67	101	65	55
Sidewall angle (degrees)
Averages	93	94	92	94	91	91	90	90	90
Std. Dev	1	1	0	1	0	0	1	0	0
CD loss (nm pr edge)
Averages	-11	-13	-17	-10	-10	-10	-20	-13	-24
Std. Dev	12	10	11	14	15	15	16	15	21
Bowing (nm)
Averages	31	42	13	16	6	6	3	-3	0
Std. Dev	7	6	4	3	2	2	2	3	1
Bottom curvature
Averages	-45	-45	-44	-43	-32	-32	-34	-32	-39
Std. Dev	5	7	4	9	10	10	9	8	9
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• ICP Metal Etch nanoetch
• Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)

Recipe
C4F8 (sccm)
SF6 (sccm)
O2 (sccm)
Coil power (W)
Platen power (W)
Pressure (mtorr)
Temperature (degs C)
Process time (s)
Etch rates (nm/min)
Averages	.	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.	.	.	.
Zep etch rate (nm/min)
		.	.	.	.	.	.	.	.	.
Sidewall angle (degrees)
Averages	.	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.	.	.	.
CD loss (nm pr edge)
Averages	.	.	.	.	.	.	.		.
Std. Dev	.	.	.	.	.	.	.	.
Bowing (nm)
Averages	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.		.	.
Bottom curvature
Averages	.	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.	.	.	.
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