Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si

Test of the deposition rate and film characteristics

Recipe

	Recipe 1
Platen angle	10 degrees
Platen rotation speed	20rpm
Ar(N) flow	4 sccm
Ar(dep. source) flow	8 sccm
I(N)	320mA
Power	700W
I(B)	280mA
V(B)	1100V
Vacc(B)	400V

Results

Depostion time	10 min	30 min	30 min
Characterization methode	FilmTek	FilmTek	Ellipsometer 3 angles
Deposition thickness	71 nm	229 nm	242 nm
Deposition rate	7.1 nm/min	7.6 nm/min	8.1 nm/min
Refractive index @632nm	n=4.55 k=0.826	n=4.916 k=0.547	n=4.589 k=0.479
Refractive index @1000nm @950nm using the ellipsometer	n=? k=?	n=4.297 k=0.0836	n=4.136 k=0.189
Roughness	6.1 nm	10.4 nm	1.1 nm