Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si

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Revision as of 11:40, 21 March 2012 by BGE (talk | contribs) (New page: ==Test of the deposition rate and film characteristics== ===Recipe=== {| border="2" cellspacing="1" cellpadding="3" align="left" ! !Recipe 1 |- |Platen angle |10 degrees |- |Platen rotat...)
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Test of the deposition rate and film characteristics

Recipe

Recipe 1
Platen angle 10 degrees
Platen rotation speed 20rpm
Ar(N) flow 4 sccm
Ar(dep. source) flow 8 sccm
I(N) 320mA
Power 700W
I(B) 280mA
V(B) 1100V
Vacc(B) 400V


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