Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide/IBSD of TiO2

Acceptance test for TiO2 deposition:

.	Acceptance Criteria	Acceptance Results recipe 1	Acceptance Results recipe 2
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	100 mm SSP Si wafer 525+-25 µm thick	100 mm SSP Si wafer 525+-25 µm thick
Material to be deposited	TiO2 The purpose of the TiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses):1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material.	TiO2	TiO2
Deposition thickness	147nm	~184 nm	121 nm
Deposition rate	2.8 nm/min	3.54nm/min +- 0.03nm/min One stdev - wafer to wafer	3.03nm/min Only done once
Thickness uniformity	<+-1%	<+-1.00%	<+-0.90%
Reproducibility	<+-1.5%	+-0.9% on 5 wafers in a row	not tested
Stress	<500MPa	~300MPa	Not measured expect ~300MPa

	Recipe 1	Recipe 2
Platen angle	50 degrees	30 degrees
Platen rotation speed	20rpm	20rpm
Ar(N) flow	4 sccm	4 sccm
Ar(dep. source) flow	9 sccm	9 sccm
O2(dep. source) flow	2 sccm	2 sccm
O2(etch source) flow	8 sccm	8 sccm
I(N)	459mA	450mA
Power	875W	875W
I(B)	390mA	390mA
V(B)	1300V	1300V
Vacc(B)	400V	400V

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Other results

Roughness of the surface

Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= ~1nm