Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Quartz etch using AOE

Nanoetch in quartz 65mmx65mmx6.25mm substrates

by bge@danchip

Some priliminary results

The tests were done on 2" quartz wafers with a thickness of 1mm. These were placed on a 65mmx65mmx6,25mm quartz plate with a 2" groove. This 65mmx65mmx6,25mm plate was placed on a 4" Si wafer with a 65mmx65mm groove. the masking material was Cr sputter deposited in Wordentec and and patterned with ZEP520A resist by e-beam and ICP metal Cr etch.

Recipe used STS65x65:

Parameter	Crom mask
Coil Power [W]	1200
Platen Power [W]	500
Platen temperature [^oC]	50
CF $_{4}$ flow [sccm]	43
C $_{4}$ F $_{8}$ flow [sccm]	20
O $_{2}$ flow [sccm]	10
Pressure [mTorr]	8

Parameter	Results
Etch rate	~300nm/min
Etch profile	86-87 degrees
ARDE	There does not seem to be a significant aspect ratio dependency in the etch rate up to aspect ratio 1:2 ~ 1:3
Mask selectivity	20nm Cr is enough to etch 200nm in the quartz
Images	See below

SEM images of the quartz etch describes above. The quartz wafer was broken and scanned in profile

Process date: August 2011 Recipe: STS65x65@50degrees Process time: 40sec. Mask: Cr ~20nm thick Design line width: 50nm Design periode: 150nm	Process date: August 2011 Recipe: STS65x65@50degrees Process time: 40sec. Mask: Cr ~20nm thick Design line width: 75nm Design periode: 225nm	Process date: August 2011 Recipe: STS65x65@50degrees Process time: 40sec. Mask: Cr ~20nm thick Design line width: 100nm Design periode: 300nm	Process date: August 2011 Recipe: STS65x65@50degrees Process time: 40sec. Mask: Cr ~20nm thick Design line width: 200nm Design periode: 600nm	Process date: August 2011 Recipe: STS65x65@50degrees Process time: 40sec. Mask: Cr ~20nm thick Design line width: 300nm Design periode: 900nm