Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch

From LabAdviser

Results from the acceptance test in February 2011

Acceptance test for Au etch:

. Acceptance Criteria

Acceptance Results

Substrate information
  • 50 mm SSP Si wafer
  • 525 µm thick
  • Supplied by Danchip
.
Material to be etched
  • E-beam deposited Au
.
Mask information
  • E-beam resist mask:
  1. 400nm of spin coated ZEP520A e-beam resist
  2. Patterned by E-beam lithography
.
Features to be etched
  • 300nm - 3µm dots and lines + a square of 200µmx200µm
.
Etch depth
  • 300nm
  • ~272 nm
Etch rate
  • >80nm/min
  • 54.5nm/min +- 0.6nm/min (one standard deviation)
Etch rate uniformity
  • <+-2%
  • +-(0.2% +-0.2%)
Reproducibility
  • <+-2%
  • +-0.9%
Selectivity (Au etch rate/ZEP etch rate)
  • At least 1:1
  • 1.2:1
Etch profile
  • 70-90dg.
  • 75dg

Process parameters for the acceptance test

Parameter Au etch acceptance
Neutalizer current [mA] 550
RF Power [W] 1300
Beam current [mA] 500
Beam voltage [V] 600
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 5.0
Ar flow to beam [sccm] 10.0
Rotation speed [rpm] 20
Stage angle [degrees] 30



Some SEM profile images of the etched Au

s18-Au-ZEP3
s18-Au-ZEP5