Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE

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Revision as of 12:55, 3 January 2012 by BGE (talk | contribs) (New page: {| border="2" cellspacing="2" cellpadding="3" !Parameter !SiN_etch |- |Coil Power [W] |700 |- |Platen Power [W] |100 |- |Platen temperature [<sup>o</sup>C] |0 |- |C<math>_4</math>F<math>_...)

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Parameter	SiN_etch
Coil Power [W]	700
Platen Power [W]	100
Platen temperature [^oC]	0
C $_{4}$ F $_{8}$ flow [sccm]	5
He flow [sccm]	174
H $_{2}$ flow [sccm]	4
Pressure [mTorr]	4

Typical results	Resist mask
Silicon nitride (LPCVD) etch rate	~60 nm/min
Selectivity to photo resist [:1]	?
Etch rate in Si	?
Etch rate in SiO2	?
Profile [^o]	not tested
Images	.
Comments	.

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