Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE

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< Specific Process Knowledge‎ | Etch‎ | AOE (Advanced Oxide Etch)
Revision as of 11:55, 3 January 2012 by BGE (talk | contribs) (New page: {| border="2" cellspacing="2" cellpadding="3" !Parameter !SiN_etch |- |Coil Power [W] |700 |- |Platen Power [W] |100 |- |Platen temperature [<sup>o</sup>C] |0 |- |C<math>_4</math>F<math>_...)
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Parameter SiN_etch
Coil Power [W] 700
Platen Power [W] 100
Platen temperature [oC] 0
CFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} FFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _8} flow [sccm] 5
He flow [sccm] 174
HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} flow [sccm] 4
Pressure [mTorr] 4


Typical results Resist mask
Silicon nitride (LPCVD) etch rate ~60 nm/min
Selectivity to photo resist [:1] ?
Etch rate in Si ?
Etch rate in SiO2 ?
Profile [o] not tested
Images .
Comments .
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