Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings

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The content on this page, including all images and pictures, was created by Berit Herstrøm @ DTU Nanolab (BGHE), unless otherwise stated.

• 60 nm Barc
• 360 nm KRF resist

by bghe@nanolab experiments made in June/July 2012

• Some examples of blazed gratings in fused silica etched with Cr and DUV resist as masking layer
• 
  30 min etch with 100 nm Cr mask, used recipe BGHE blazed gratings with CHF3
  *Rotation speed 0 rpm
  *Angle: -35
  *I(N) = 400 mA
  *RF power = 1300 W
  *I(B) = 300 mA
  *V(B) = 300 V
  *V(AC,B)=500 V
  *Ar(N) flow = 5 sccm
  *Ar(B) flow = 5 sccm
  *CHF3 flow = 15 sccm
• 
  45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
  *Rotation speed 0 rpm
  *Angle: -35
  *I(N) = 400 mA
  *RF power = 1300 W
  *I(B) = 300 mA
  *V(B) = 300 V
  *V(AC,B) = 500 V
  *Ar(N) flow = 5 sccm
  *Ar(B) flow = 5 sccm
  *CHF3 flow = 15 sccm
• 
  20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
  *Rotation speed 0 rpm
  *Angle: -35
  *I(N) = 550 mA
  *RF power = 1300 W
  *I(B) = 500 mA
  *V(B) = 600 V
  *V(AC,B) = 400 V
  *Ar(N) flow = 5 sccm
  *Ar(B) flow = 10 sccm
  *CHF3 flow = 0 sccm
• 
  15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
  *Rotation speed 0 rpm
  *Angle: -35
  *I(N) = 400 mA
  *RF power = 1300 W
  *I(B) = 300 mA
  *V(B) = 300 V
  *V(AC,B) = 500 V
  *Ar(N) flow = 5 sccm
  *Ar(B) flow = 5 sccm
  *CHF3 flow = 15 sccm