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Specific Process Knowledge/Etch/Titanium Nitride/ICP metal

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Revision as of 11:54, 29 August 2025 by Prakus (talk | contribs) (Created page with " == Etching of Titanium nitride with resist as masking material - on 6" carrier wafer == This recipe was adapted from Evgeniy Shkondin recipe from 2018. This recipe is still under investigation. {| border="2" cellspacing="2" cellpadding="3" !Parameter !A Etch with carrier |- |Coil Power [W] |500 |- |Platen Power [W] |10 |- |Platen temperature [<sup>o</sup>C] |0 |- |Cl<sub>2</sub> flow [sccm] |5 |- |Ar flow [sccm] |5 |- |Pressure [mTorr] |10 |- |} {| border="2" cel...")
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Etching of Titanium nitride with resist as masking material - on 6" carrier wafer

This recipe was adapted from Evgeniy Shkondin recipe from 2018. This recipe is still under investigation.


Parameter A Etch with carrier
Coil Power [W] 500
Platen Power [W] 10
Platen temperature [oC] 0
Cl2 flow [sccm] 5
Ar flow [sccm] 5
Pressure [mTorr] 10


Results Test on wafer with 20% load, by prakus @Nanolab Test by eves @nanolab
Etch rate of TiN ## nm/min (2025)  
Selectivity to resist [TiN : AZ resist] #:#  
Wafer uniformity (100mm) ?  
Profile [o] ?  
Wafer uniformity map (click on the image to view a larger image) coming soon  
SEM profile images coming soon  


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