Specific Process Knowledge/Etch/DRIE-Pegasus/processD
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| Parameter | Specification | Average result |
|---|---|---|
| Etch rate (µm/min) | > 15 | 18.9 |
| Etched depth (µm) | 150 | 189.1 |
| Scallop size (nm) | < 800 | 718 |
| Profile (degs) | 91 +/- 1 | 91.1 |
| Selectivity to AZ photoresist | > 150 | 310 |
| Undercut (µm) | <1.5 | 0.84 |
| Uniformity (%) | < 3.5 | 3.0 |
| Repeatability (%) | <4 | 0.43 |
| Main etch (D->E) | Etch | Dep |
|---|---|---|
| Gas flow (sccm) | SF6 275 O2 5 | C4F8 150 |
| Cycle time (secs) | 2.4 | 2.0 |
| Pressure (mtorr) | 26 | 20 |
| Coil power (W) | 2500 | 2000 |
| Platen power (W) | 35 | 0 |
| Cycles | 110 (process time 08:04) | |
| Common | Temperature 0 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers | |