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Sputter-System Metal-Nitride(PC3)
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Lesker sputter system
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| Generel description
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- Pulsed DC reactive sputtering
- Reactive HIPIMS (high-power impulse magnetron sputtering) (require 3-inch target)
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- Reactive DC sputtering (not tested)
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| Stoichiometry
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- NbxTyN (Sputter-System Metal-Nitride(PC3))
Tunable composition
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| Film thickness
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- Limited by process time.
- Deposition rate (0.18 nm/s) likely faster than Sputter-System (Lesker)
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- Limited by process time.
- Deposition rate unknown
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| Process temperature
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| Step coverage
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- Some step coverage possible
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- Some step coverage possible but amount unknown
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| Film quality
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- Deposition on one side of the substrate
- Properties including tunable stoichiometry (requires process development)
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- Deposition on one side of the substrate
- Unknown quality
- Likely O-contamination
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| Batch size
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- Many smaller samples
- Up to 10*100 mm or 150 mm wafers
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- Several smaller samples
- 1-several 50 mm wafers
- 1*100 mm wafers
- 1*150 mm wafer
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| Allowed materials
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- Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
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- Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
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