Specific Process Knowledge/Thin film deposition/Deposition of MoSi

Molybdenum silicide is particularly attractive for optical coatings because co-sputtering Mo with Si allows precise control of MoSi stoichiometry—and, in turn, the film’s refractive index at the design wavelength.

MoSi alloy can be deposited by DC co-sputtering in either Sputter-System Metal-Oxide (PC1) or Sputter-System Metal-Nitride (PC3)—collectively referred to as the Cluster Lesker. The process uses two 3-inch targets:

• Mo (unbonded)

• Si (indium-bonded)

Achieving the desired composition and optical properties requires careful tuning of three key parameters:

• Magnetron power on each target

• Substrate temperature

• Deposition pressure

Below is a link summarizing process results obtained with the Metal-Oxide (PC1) system:

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