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General Purpose Annealing furnace (C2)

The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.

The C2 furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.

A permission from the Thin Film group is required, before samples are annealed in the furnace.

An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.

Annealings can be performed in a nitrogen atmosphere, with nitrogen flow rates adjustable up to 10 SLM.

A permission from the Thin Film group is required, before samples are annealed in the furnace.

Please also check the cross contamination information in LabManager before you use the furnace.

The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.

The user manual and contact information can be found in LabManager:

III-V Oxidation furnace (C2)

Process knowledge

Standard wet oxidation recipe on the III-V oxidation furnace

Overview of the performance of the III-V oxidation furnace and some process related parameters

Purpose		Annealing of different samples and sample materials
Performance	Lateral oxidation rate	Very sample dependent
Process parameter range	Process temperature	Up to 600 ^oC, temperature ramp rate up to 10 ^oC/s
	Process pressure	1 atm
	Gasses on the system	N₂
Substrates	Batch size	Several smaller samples (placed vertically on a quartz plate)
Substrates	Substrate materials allowed	III-V devices Silicon