Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Remove resist in the AOE
Remove AZ resist in the AOE using the recipe Descum
| Parameter | Descum |
|---|---|
| Coil Power [W] | 1000 |
| Platen Power [W] | 30 |
| Platen temperature [oC] | 0 |
| O flow [sccm] | 99 |
| Pressure [mTorr] | 10.0 (strike pressure 20.0 mTorr |
| Typical results | Resist mask |
|---|---|
| Si etch rate | ~1.12 my/min tested by Yunhong Ding @fotonik |
| Selectivity to photo resist [:1] | ~2.6 tested by Yunhong Ding @fotonik |
| Etch rate in SiO2 | ~0.34 my/min tested by Yunhong Ding @fotonik |
| Profile [o] | not tested |
| Images | . |
| Comments | The profile is supposed to be ~88dg but it has not been confirmed |