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Specific Process Knowledge/Etch/Titanium Oxide

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Etch of Titanium oxide has been test in the ICP metal etcher.


Comparison of Titanium Oxide (ALD) etch Methods

BHF ICP Metal Etcher
Generel description Wet etch of TiO2 (ALD)
Etch rate range 2,5 nm/min
  • ~30nm/min (pure Al)
Etch profile
  • Isotropic
  • Isotropic
Substrate size
  • Any size (in beaker)
  • Chips (6-60 mm)
  • 100 mm wafers
  • 150 mm wafers
Allowed materials In beaker:
  • Any material
  • Every thing that is allowed in the Developer: TMAH Manual