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Etching of Titanium

Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.

	ICP metal	IBE (Ionfab300+)
Generel description	Dry plasma etch of Ti	Sputtering of Ti - pure physical etch
Etch rate range	~50-200 nm/min (depending on features size and etch load and recipe settings)	~20nm/min
Etch profile	Anisotropic (vertical sidewalls)	Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size	smaller pieces on a carrier wafer #1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer) #1 150mm wafers	Smaller pieces glued to carrier wafer #1 50mm wafer #1 100mm wafer #1 150mm wafer #1 200mm wafer
Allowed materials	Silicon Quartz/fused silica Photoresist/e-beam resist PolySilicon, Silicon oxide Silicon (oxy)nitride Aluminium Titanium Chromium	Silicon Silicon oxides Silicon nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape