Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch

From LabAdviser
Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41 nano1.42 nano1.43
C4F8 (sccm) 52 52 52 52 75 75 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0 0 0
Coil power (W) 800 (forward) 600 (forward) 800 (forward) 600 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward)
Platen power (W) 50 50 50 40 50 50 75 40 30
Pressure (mtorr) 4 4 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20 -20 -20
Process time (s) 120 120 120 120 120 120 120 120 120
Etch rates (nm/min)
Averages 295 228 299 235 183 183 166 160 148
Std. Dev 36 29 37 20 9 9 9 8 6
Sidewall angle (degrees)
Averages 93 94 92 94 91 91 90 90 90
Std. Dev 1 1 0 1 0 0 1 0 0
CD loss (nm pr edge)
Averages -11 -13 -17 -10 -10 -10 -20 -13 -24
Std. Dev 12 10 11 14 15 15 16 15 21
Bowing (nm)
Averages 31 42 13 16 6 6 3 -3 0
Std. Dev 7 6 4 3 2 2 2 3 1
Botton curvature
Averages -45 -45 -44 -43 -32 -32 -34 -32 -39
Std. Dev 5 7 4 9 10 10 9 8 9
Images Images Images Images Images Images Images Images Images Images

The nanoetch