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Deposition of SiN with PECVD4/NEW TESTS QC

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Revision as of 14:38, 4 March 2025 by Mfarin (talk | contribs) (Created page with " Due to recent instability in the High-Frequency (HF) generator, the thickness deposited during the QC HF Nitride process has not been very reliable. To better control it, new tests were performed. Since the recipe uses 25W of HF, and the main variation was the reflected power—oscillating between ~5W and 10W—higher power levels were tested. When using 100W, the reflected power was significantly more stable. Below, some of the data is presented, comparing 25W and 100...")
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Due to recent instability in the High-Frequency (HF) generator, the thickness deposited during the QC HF Nitride process has not been very reliable. To better control it, new tests were performed. Since the recipe uses 25W of HF, and the main variation was the reflected power—oscillating between ~5W and 10W—higher power levels were tested. When using 100W, the reflected power was significantly more stable. Below, some of the data is presented, comparing 25W and 100W of HF power, as well as results from different characterization tools (Ellipsometer and FilmTek).