Specific Process Knowledge/Lithography/Descum/PlasmaAsher2

Jitka Urbánková & Jesper Hanberg, December 2019

Descum results plasma asher 2 - recipe 1

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Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.

recipe 1:

• O2 flow: 100 ml/min
• N2 flow: 100 ml/min
• Power: 150 W

Ashing time (min) 1 2 3 4 6 7 8 9 10 12 14 15 20 Etched Thickness (nm) 8,7 5,1 12,5 6,2 31,8 86,0 25,7 46,8 38,3 49,7 59,4 140,1 360,7 Initial temperature (°C) 28 21 31 21 22 28 25 24 21 24 24 22 22

Descum results plasma asher 2 - recipe 2

recipe 2:

• O2 flow: 500 ml/min
• N2 flow: 0 ml/min
• Power: 200 W

Ashing time (min) 1 2 3 4 5 6 7 8 10 12 15 20 Etched Thickness (nm) 8,1 9,4 16,8 55,2 44,0 47,5 42,5 55,1 85,3 122,4 184,8 305,9 Initial temperature (°C) 22 21 21 22 22 22 21 21 20 21 21 22

A linear time dependence was observed after etching 7 minutes or more (recipe 2).