File:WF 2E04 mar23 2011-120a.jpg

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Revision as of 14:31, 6 April 2011 by Jml (talk | contribs) (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers

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current14:31, 6 April 2011Thumbnail for version as of 14:31, 6 April 20111,024 × 768 (132 KB)Jml (talk | contribs)Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers

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