File:WF 2E03 mar23 2011-150b.jpg

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Revision as of 12:42, 4 April 2011 by Jml (talk | contribs) (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.

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current12:42, 4 April 2011Thumbnail for version as of 12:42, 4 April 20111,024 × 768 (103 KB)Jml (talk | contribs)Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.

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