File:WF 2E03 mar23 2011-030b.jpg
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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.
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current | 12:40, 4 April 2011 | 1,024 × 768 (92 KB) | Jml (talk | contribs) | Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. |
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